STMicroelectronics STGP10NB60SD IGBT晶体管 N沟道 600 V 10 A 低压降 PowerMESH

Width: 4.6 mm

Height: 9.15 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 80 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 20 A

Collector-Emitter Saturation Voltage: 1.35 V

Continuous Collector Current at 25 C: 29 A