STMicroelectronics STGWA40H65DFB IGBT晶体管沟槽栅场阻断650 V，40 A高速HB系列IGBT

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 283 W

Gate-Emitter Leakage Current: +/- 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 80 A

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 80 A