STMicroelectronics STH30N65DM6-7AG MOSFET N沟道 650 V，典型102 mOhm，28 A MDmesh DM6 功率MOSFET 汽车级

Fall Time: 8 ns

Rise Time: 3.3 ns

Technology: Si

Unit Weight: 1.540 g

Channel Mode: Enhancement

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 46 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 223 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 46 ns

Id - Continuous Drain Current: 18 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 115 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.75 V