STMicroelectronics STL13N60DM2 MOSFET N沟道 600 V，典型0.350欧姆 8 A MDmesh DM2 功率MOSFET

Fall Time: 10.6 ns

Rise Time: 4.8 ns

Technology: Si

Unit Weight: 76 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 19 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 52 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 12.3 ns

Typical Turn-Off Delay Time: 42.5 ns

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 350 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3 V