STMicroelectronics STL33N65M2 MOSFET N沟道 650 V，0.124 欧姆典型值 20 A MDmesh M2 功率MOSFET

Fall Time: 11.5 ns

Rise Time: 11.5 ns

Technology: Si

Unit Weight: 180 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 41.5 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13.5 ns

Typical Turn-Off Delay Time: 72.5 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 124 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2 V