STMicroelectronics STN6N60M2 MOSFET N沟道 600 V，典型值1.00欧姆 5.5 A MDmesh M2 功率MOSFET

Technology: Si

Unit Weight: 110 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 6.2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 6 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Id - Continuous Drain Current: 5.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.2 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4 V