STMicroelectronics STO67N60M6 MOSFET N沟道 600 V，典型48 mOhm，34 A MDmesh M6 功率MOSFET

Technology: Si

Unit Weight: 76 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 72.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Id - Continuous Drain Current: 34 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 54 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4.75 V