STMicroelectronics STP36N60M6 MOSFETs N沟道 600 V，典型85 mOhm 30 A MDmesh M6 功率MOSFET

Fall Time: 7.3 ns

Rise Time: 5.3 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 44.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 208 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 15.2 ns

Typical Turn-Off Delay Time: 50.2 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 85 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3.25 V