STMicroelectronics STP50N60DM6 MOSFET N沟道 600 V，70 mOhm 典型值 36 A MDmesh DM6 功率MOSFET

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 55 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Id - Continuous Drain Current: 36 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 80 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.75 V