STMicroelectronics STP80N600K6 MOSFET N沟道 800 V，典型值515 mOhm，7 A MDmesh K6 功率MOSFET

Fall Time: 12.6 ns

Rise Time: 4.1 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 10.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 86 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 28.2 ns

Id - Continuous Drain Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 600 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 4 V