STMicroelectronics STP9NM60N MOSFET N沟道 600V 0.63欧姆 6.5A MDmesh II PWR

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 6.5 A

Rds On - Drain-Source Resistance: 630 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V