STMicroelectronics STW18N60DM2 MOSFET N沟道 600 V，典型0.260欧姆 12 A MDmesh DM2 功率MOSFET

Fall Time: 32.5 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 20 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 90 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 13.5 ns

Typical Turn-Off Delay Time: 9.5 ns

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 260 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 2 V