STMicroelectronics STW18N60M2 MOSFET N沟道 600 V，典型0.255欧姆 13 A MDmesh M2 功率MOSFET，TO-247封装

Fall Time: 10.6 ns

Rise Time: 9 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 21.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 110 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 47 ns

Id - Continuous Drain Current: 13 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 280 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 2 V