STMicroelectronics STW56N65M2-4 MOSFET N沟道 650 V，0.049 欧姆典型值 49 A MDmesh M2 功率MOSFET

Fall Time: 13 ns

Rise Time: 27.5 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 93 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 358 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 19 ns

Typical Turn-Off Delay Time: 146 ns

Id - Continuous Drain Current: 49 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 62 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2 V