STMicroelectronics STW57N65M5-4 N沟道MOSFET 650 V 0.056欧姆典型值 42 A

Fall Time: 8 ns

Rise Time: 9 ns

Technology: Si

Unit Weight: 6 g

Mounting Style: Through Hole

Qg - Gate Charge: 98 nC

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Id - Continuous Drain Current: 42 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 63 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V