Texas Instruments CSD15380F3 MOSFETs 20-V N沟道 NexF ET 功率MOSFET si A 595-CSD15380F3T

Width: 0.64 mm

Height: 0.35 mm

Length: 0.73 mm

Fall Time: 7 ns

Rise Time: 1 ns

Technology: Si

Unit Weight: 0.300 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 216 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 3 ns

Typical Turn-Off Delay Time: 7 ns

Id - Continuous Drain Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.46 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V