Vishay General Semiconductor SI8457DB-T1-E1 MOSFETs -12V Vds 8V Vgs 微型封装 1.6 x 1.6

Fall Time: 210 ns

Rise Time: 60 ns

Technology: Si

Unit Weight: 53.850 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 93 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2.7 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 27 ns

Typical Turn-Off Delay Time: 300 ns

Id - Continuous Drain Current: 10.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 26 S

Rds On - Drain-Source Resistance: 15 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 900 mV