快速支持
直接联系认证专家
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 570mW
Operating temperature: -55 to 150C
Drain to Source voltage: 20V
Current - Drain (Id) (25°C): 1.13A|880mA
Field-effect transistor type: N and P-Channel
Gate Charge - (when applying Vgs): 2nC@4.5V
On Voltage - (Vgs when Id is applied): 1V@100uA
On Resistance - (Rds when Id,Vgs is applied): 280mOhm@1.13A|4.5V
