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FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 510mW
Operating temperature: -55 to 150C
Drain to Source voltage: 60V
Current - Drain (Id) (25°C): 370mA
Field-effect transistor type: 2N-Channel(Dual)
Gate Charge - (when applying Vgs): 1.4nC@10V
On Voltage - (Vgs when Id is applied): 2.5V@250uA
On Resistance - (Rds when Id,Vgs is applied): 1.4Ohm@340mA|10V
Input Capacitance - (Ciss when Vds is applied): 18.5pF@30V
