Vishay SI3459BDV-T1-E3 MOSFET

Vgs(th): 3 V

Vgs (Max): 20V

Gate Charge (Qg): 12nC

Power consumption: 3.3W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 60V

Continuous drain current: 2.9A

Input Capacitance (Ciss): 350pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 216mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V