Vishay SI5424DC-T1-GE3 MOSFET

Vgs(th): 2.3 V

Vgs (Max): 25V

Gate Charge (Qg): 32nC

Power consumption: 2.5|6.25W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 6A

Input Capacitance (Ciss): 950pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 24mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V