Wolfspeed C3M0040120D 碳化硅MOSFET，MOSFET，40毫欧，1200伏，TO-247-3，工业级

Fall Time: 12 ns

Rise Time: 60 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 101 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 326 W

Vgs - Gate-Source Voltage: - 4 V, + 15 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 66 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 21 S

Rds On - Drain-Source Resistance: 40 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.6 V