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Fall Time: 25 ns
Rise Time: 36 ns
Technology: SiC
Unit Weight: 6 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 30.4 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 125 W
Vgs - Gate-Source Voltage: - 8 V, + 18 V
Typical Turn-On Delay Time: 21 ns
Typical Turn-Off Delay Time: 28 ns
Id - Continuous Drain Current: 36 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 11.6 S
Rds On - Drain-Source Resistance: 90 mOhms
Vds - Drain-Source Breakdown Voltage: 900 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
