Wolfspeed C3M0120065D 碳化硅MOSFET，MOSFET，120毫欧，650伏，TO-247-3，工业级

Fall Time: 8 ns

Rise Time: 13 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 28 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 98 W

Vgs - Gate-Source Voltage: - 4 V, + 15 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 17 ns

Id - Continuous Drain Current: 22 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 5 S

Rds On - Drain-Source Resistance: 120 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 3.6 V