Wolfspeed C3M0120065J 碳化硅MOSFET，MOSFET，120毫欧，650伏，TO-263-7，工业级

Fall Time: 9 ns

Rise Time: 9 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 26 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 86 W

Vgs - Gate-Source Voltage: - 4 V, + 15 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 21 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 5 S

Rds On - Drain-Source Resistance: 120 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 3.6 V