Wolfspeed C3M0120065L SiC MOSFETS 650 V，120 毫欧，TOLL 封装，工业级，分立 SiC MOSFET

Technology: SiC

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 26 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 86 W

Vgs - Gate-Source Voltage: - 8 V, + 19 V

Id - Continuous Drain Current: 21 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 157 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 3.6 V