Wolfspeed C3M0160120D SiC MOSFETS 碳化硅 MOSFET，160毫欧，1200伏，TO-247-3，工业级

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 38 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 97 W

Vgs - Gate-Source Voltage: - 8 V, + 19 V

Id - Continuous Drain Current: 17 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 160 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.6 V