Wolfspeed CPM3-1200-0013A SiC MOSFETS ZFETTM SiC DMOSFET，1200V Vds，RDS On 13 mOhm，铝源，镍/金漏极

Technology: SiC

Mounting Style: SMD/SMT

Qg - Gate Charge: 260 nC

Number of Channels: 1 Channel

Vgs - Gate-Source Voltage: - 4 V, + 15 V

Id - Continuous Drain Current: 149 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 71 S

Rds On - Drain-Source Resistance: 13 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.5 V