Wolfspeed E3M0045065K SiC MOSFETS 碳化硅 MOSFET，45毫欧，650伏，TO-247-4，汽车用，第三代

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: Through Hole

Qg - Gate Charge: 64 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 W

Vgs - Gate-Source Voltage: - 8 V, + 19 V

Id - Continuous Drain Current: 46 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 45 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 3.6 V