Wolfspeed E3M0160120D SiC MOSFETs 碳化硅 MOSFET，160mΩ，1200V，TO-247-3，汽车用

Technology: SiC

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 33 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 103 W

Vgs - Gate-Source Voltage: - 8 V, + 19 V

Id - Continuous Drain Current: 17.9 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 160 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.6 V