YAGEO XSemi XP10C150M MOSFET互补N沟+P沟 100V/-1

Fall Time: 7 ns, 17 ns

Rise Time: 4 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 11 nC, 32 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 7 ns, 12 ns

Typical Turn-Off Delay Time: 16 ns, 46 ns

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 7.5 S, 10 S

Rds On - Drain-Source Resistance: 150 mOhms, 160 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 3 V