YAGEO XSemi XP2306GN MOSFET N沟道 20V 5.3A SOT-23

Width: 2.9 mm

Height: 1.08 mm

Length: 2.7 mm

Fall Time: 2.8 ns

Rise Time: 14 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 8.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.38 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 18.4 ns

Id - Continuous Drain Current: 5.3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 13 S

Rds On - Drain-Source Resistance: 30 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.25 V