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Fall Time: 2 ns, 3 ns
Rise Time: 6.5 ns, 8 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 2.8 nC, 2.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.136 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 5.5 ns
Typical Turn-Off Delay Time: 10 ns, 17 ns
Id - Continuous Drain Current: 2.3 A, 3.3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 4.6 S, 2.9 S
Rds On - Drain-Source Resistance: 72 mOhms, 150 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
