Vishay General Semiconductor SI1902DL-T1-GE3 MOSFETs 20V .66A .27W

Width: 1.25 mm

Height: 1 mm

Length: 2.1 mm

Fall Time: 10 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 1.2 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 10 ns

Id - Continuous Drain Current: 700 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 385 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V