Infineon GS-065-060-5-T-A-MR 氮化镓场效应管汽车用650V，60A，氮化镓增强型，GaNPX封装，顶面冷却
制造商: Infineon Model: GS-065-060-5-T-A-MR - 联系
Fall Time: 7.7 ns
Rise Time: 8.5 ns
Technology: GaN-on-Si
Channel Mode: Enhancement
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: E-Mode
Qg - Gate Charge: 14 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 10 V, + 7 V
Typical Turn-On Delay Time: 8.1 ns
Maximum Operating Frequency: > 10 MHz
Minimum Operating Frequency: 0 Hz
Typical Turn-Off Delay Time: 9.8 ns
Id - Continuous Drain Current: 60 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 32 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 2.6 V
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