Navitas Semiconductor G3F20MT12J-TR 碳化硅MOSFET，单个，N沟道，108安，1.2千伏，26.5毫欧，TO-263（D2PAK），7引脚
制造商: Navitas Semiconductor Model: G3F20MT12J-TR - 联系
No. of Pins: 7
Channel Type: N Channel
Power Dissipation: 448 W
RDS(ON) Test Voltage: 18 V
Transistor Case Style: TO-263 (D2PAK)
Drain Source Voltage Vds: 1.2 kV
Operating Temperature Max: 175 °C
Continuous Drain Current Id: 108 A
Mosfet Module Configuration: Single
Drain Source On State Resistance: 26.5 mOhm
Gate Source Threshold Voltage Max: 4.3 V
Details
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