ROHM Semiconductor BSM250D17P2E004 SiC功率模块1700V Vdss；250A Id SiC功率模块
制造商: ROHM Semiconductor Model: BSM250D17P2E004 - 联系
Width: 62 mm
Height: 15.4 mm
Length: 152 mm
Fall Time: 70 ns
Rise Time: 55 ns
Technology: SiC
Unit Weight: 431 g
Configuration: Dual
Mounting Style: Screw Mount
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Vr - Reverse Voltage: 1.2 kV
Pd - Power Dissipation: 1.8 kW
Vgs - Gate-Source Voltage: - 6 V, + 22 V
Typical Turn-On Delay Time: 55 ns
Typical Turn-Off Delay Time: 195 ns
Id - Continuous Drain Current: 250 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 1.7 kV
Vgs th - Gate-Source Threshold Voltage: 4 V
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