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MOSFETs N-Ch 25V 40A TISON-8 Infineon BSC0911NDATMA1

Width: 5.15 mm

Height: 1.27 mm

Length: 5.9 mm

Fall Time: 2.2 ns, 4 ns

Rise Time: 2.8 ns, 5.4 ns

Technology: Si

Unit Weight: 101.880 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 3 nC, 8.8 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3.3 ns, 3.8 ns

Typical Turn-Off Delay Time: 15 ns, 25 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 77 S, 130 S

Rds On - Drain-Source Resistance: 3.7 mOhms, 1.3 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 1.6 V

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