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MOSFETs N-Ch 800V 11A TO247-3 CoolMOS C3 Infineon SPW11N80C3

Width: 5.21 mm

Height: 21.1 mm

Length: 16.13 mm

Fall Time: 10 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 85 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 156 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 72 ns

Id - Continuous Drain Current: 11 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 390 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V

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