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MOSFETs Đĩa NCh HiPerFET-Q3 Lớp TO-264(3) IXYS IXFB40N110Q3

Fall Time: 26 ns

Rise Time: 68 ns

Technology: Si

Unit Weight: 1.600 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 300 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.56 kW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 47 ns

Typical Turn-Off Delay Time: 74 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 14 S

Rds On - Drain-Source Resistance: 260 mOhms

Vds - Drain-Source Breakdown Voltage: 1.1 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V

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