Bourns TISP8201HDMR-S デュアル極性SLIC過電圧保護バッファードNゲートSCRデュアル

Width: 5.6 mm

Height: 2.2 - 0.1 mm

Length: 5.6 mm

Unit Weight: 135 mg

Mounting Style: SMD/SMT

Breakover Voltage VBO: 82 V

Holding Current Ih Max: 20 mA

Off-State Capacitance CO: 50 pF

Breakover Current IBO Max: 60 A

Gate Trigger Current - Igt: 15 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Non Repetitive On-State Current: 60 A

Maximum Gate Peak Inverse Voltage: 120 V

Off-State Leakage Current @ VDRM IDRM: 5 uA

Rated Repetitive Off-State Voltage VDRM: 120 V