Bourns TISP8201MDR-S デュアル極性SLIC過電圧保護プロテクター - バッファードNゲートプログラム保護

Width: 4 mm

Height: 1.55 mm

Length: 5 mm

Unit Weight: 80 mg

Current Rating: 50 uA

Mounting Style: SMD/SMT

Breakover Voltage VBO: 82 V

Holding Current Ih Max: 20 mA

Off-State Capacitance CO: 35 pF

Breakover Current IBO Max: 11 A

Gate Trigger Current - Igt: 5 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Non Repetitive On-State Current: 11 A

Maximum Gate Peak Inverse Voltage: 120 V

Off-State Leakage Current @ VDRM IDRM: 5 uA

Rated Repetitive Off-State Voltage VDRM: 120 V