Central Semiconductor 2N2712 PBFREE BJTs - バイポーラトランジスタ NPN 18Vcbo 18Vceo 5.0Vebo 18Vcb 2.8dB

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 250

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 18 V

DC Collector/Base Gain hfe Min: 75