Central Semiconductor 2N3117 PBFREE BJTs - バイポーラトランジスタ NPN 低レベル SS

Unit Weight: 312.400 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 360 mW

Gain Bandwidth Product fT: 60 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 350 mV