Central Semiconductor 2N3392 PBFREE BJTs - バイポーラトランジスタ NPN 25V 500mA バルク HFE/300

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 25 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 25 V