Central Semiconductor 2N3421 PBFREE BJTs - バイポーラトランジスタ NPN パワースイッチ

Unit Weight: 1.006 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 120

Gain Bandwidth Product fT: 40 MHz

Emitter- Base Voltage VEBO: 8 V

Collector- Base Voltage VCBO: 125 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV