Central Semiconductor 2N3799A TIN/LEAD BJTs - バイポーラトランジスタ PNP 90Vcbo 90Vceo 5.0Vebo 4.0pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

DC Current Gain hFE Max: 900

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 90 V

DC Collector/Base Gain hfe Min: 300

Collector- Emitter Voltage VCEO Max: 90 V

Collector-Emitter Saturation Voltage: 250 mV