Central Semiconductor 2N4235 PBFREE BJTs - バイポーラトランジスタ PNP パワースイッチ

Technology: Si

Unit Weight: 1.006 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 6 W

DC Current Gain hFE Max: 175 at 250 mA, 1 V

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30 at 250 mA, 1 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 600 mV