Central Semiconductor 2N4239 PBFREE BJTs - バイポーラトランジスタ NPN パワーアンプ

Technology: Si

Unit Weight: 1.006 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 6 W

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 2 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 600 mV