Central Semiconductor 2N4256 TIN/LEAD BJTs - バイポーラトランジスタ スルーホール トランジスタ - 小信号

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 500 at 4.5 V, 2 mA

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20 at 0.2 V, 50 mA

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 200 mV